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Author:

Jia, Qiang (Jia, Qiang.) | Wang, Yi (Wang, Yi.) | Suo, Hong-Li (Suo, Hong-Li.) (Scholars:索红莉) | Wang, Pan (Wang, Pan.) | Li, Meng-Yuan (Li, Meng-Yuan.) | Huo, Qian-Yu (Huo, Qian-Yu.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Preparing a highly textured, flawless YBa2Cu3O7 (YBCO) layer by ion-beam-assisted deposition (IBAD) requires a substrate with a smooth surface. In this paper, smooth tapes of Hastelloy C-276, a common template alloy, were prepared by electrochemical polishing, and the surface roughness the tapes was investigating by atomic force microscopy and scanning electron microscopy. By analyzing these results, it was discussed how the processing parameters affect the surface roughness, and it is found the following optimized processing parameters: current density of 0.104 A.cm(-2), temperature of 50 degrees C, plate spacing of 9 cm and time of 150 s. With these optimized parameters, the substrate roughness decreases to less than 5 nm, meeting the requirements of IBAD.

Keyword:

Atomic force microscopy Hastelloy C-276 Current density Electro-chemical polishing

Author Community:

  • [ 1 ] [Jia, Qiang]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 2 ] [Wang, Yi]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 3 ] [Suo, Hong-Li]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 4 ] [Wang, Pan]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 5 ] [Li, Meng-Yuan]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 6 ] [Huo, Qian-Yu]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China

Reprint Author's Address:

  • 索红莉

    [Suo, Hong-Li]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China

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ISSN: 1001-0521

Year: 2017

Issue: 8

Volume: 36

Page: 635-639

8 . 8 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:287

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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