To　increase　recording　density　of　optical　disk,　the　trends　of　development　is　using　from　blue-ray　laser　to　ultraviolet　laser　(especially　deep-ultraviolet　laser).　In　this　work,　we　have　investigated　the　structure　of　Ge-Sb-Te　phase-change　material　irradiated　by　ultraviolet　laser.　Ge2Sb　2Te5　thin　films　were　prepared　by　magnetron　sputtering　deposition　technology.　248nm　KrF　excimer　laser　and　355nm　wavelength　3rd　harmonic　DPSS　Nd:YAG　laser　were　applied　to　induce　phase　change　under　different　laser　powers　on　amorphous　Ge2Sb2Te5　thin　film.　The　microstructures　of　the　amorphous,　crystalline　and　metastable　states　were　investigated　by　X-ray　diffraction.　The　microstructures　of　the　recorded　pits　recorded　by　ultraviolet　(UV)　laser　in　the　films　were　measured　and　studied　by　atomic　force　microscope　and　scanning　electron　microscope.　This　work　obtained　the　parameters　of　using　UV　laser　to　record　on　phase-change　material　and　demonstrates　that　there　is　a　potential　to　the　development　of　optical　storage　by　employing　UV　laser.