GaN　thin　films　grown　on　sapphire　substrates　by　metalorganic　chemical　vapor　deposition　(MOCVD)　are　successfully　bonded　and　transferred　onto　Si　receptor　substrates　using　fusion　bonding　and　laser　lift-off　(LLO)　technique.　GaN/Al2O3　structures　are　joined　to　Si　substrates　by　pressure　bonding　Ti/Au　coated　GaN　surface　onto　Ti/Au　coated　Si　receptor　substrates　at　the　temperature　of　400°C.　KrF　excimer　laser　with　400-mJ/cm2　energy　density,　248-nm　wavelength,　and　30-ns　pulse　width　is　used　to　irradiate　the　wafer　through　the　transparent　sapphire　substrates　and　separate　GaN　films　from　sapphire.　Cross-section　scanning　electron　microscopy　(SEM)　combined　with　energy　dispersive　X-ray　spectrometer　(EDS)　measurements　show　that　Au/Si　solid　solution　is　formed　during　bonding　process.　Atomic　force　microscopy　(AFM)　and　photoluminescence　(PL)　measurements　show　that　the　qualities　of　GaN　films　on　Si　substrates　degrade　little　after　substrates　transfer.