GaN　thin　films　grown　on　sapphire　substrates　are　successfully　bonded　and　transferred　onto　Si　receptor　substrates　using　fusion　bonding　and　laser　lift-off　(LLO)　technique.　The　GaN/Al2O3　structures　are　joined　on　Si　substrates　by　pressure　bonding　Al/Ti/Au　coated　GaN　surfaces　onto　Ti/Au/In　coated　Si　receptor　substrates　at　the　temperature　of　200°C.　KrF　excimer　laser　with　450　mJ/cm2　energy　density,　248　nm　wavelength　and　25ns　pulse　width　is　used　to　direct　through　the　transparent　sapphire　substrates　to　separate　GaN　films　from　sapphire　substrates.　Scanning　electron　microscope　(SEM)　images　show　that　compact　GaN/Al/Ti/Au/In/Au/Ti/Si　structures　are　formed　during　bonding　process.　Atomic　force　microscope　(AFM)　and　photoluminescence　(PL)　measurements　show　that　the　qualities　of　GaN　films　on　Si　substrates　degrade　little　after　substrate　transfer.