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Abstract：
The Bi0.8Ba0.2FeO3 (BBFO) thin film was deposited on the conducting Nb:SrTiO3 (NSTO) (100) single crystal substrate by pulsed laser deposition. Nonvolatile bipolar resistive switching effect was observed in an Au/BBFO/NSTO capacitor structure. By changing the polarity of the external pulsed voltage, the device could be switched reversibly between two stable resistance states. The resistive ratio is about 10 at a read voltage of -0.5 V after applying +/- 1.5 V pulse voltages. The mechanism of the resistive switching behavior could be attributed to the electric field induced migration of oxygen vacancies, which changes the height and width of the barrier at the BBFO/NSTO interface. (C) 2015 Elsevier Ltd. All rights reserved.
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SOLID-STATE ELECTRONICS
ISSN： 0038-1101
Year： 2015
Volume： 109
Page： 72-75
1 . 7 0 0
JCR@2022
ESI Discipline： PHYSICS;
ESI HC Threshold：190
JCR Journal Grade：2
CAS Journal Grade：3
Cited Count：
WoS CC Cited Count： 10
SCOPUS Cited Count： 9
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 8
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