The　negative　thermal　expansion　(NTE)　performance　and　correlated　structure　and　magnetism　for　Si-doped　Mn3Cu1-xSixN　(x=0.1-0.5)　are　investigated.　It　is　found　that　the　NTE　behavior　appears　below　room　temperature,　the　absolute　value　of　coefficient　of　NTE　(vertical　bar　alpha　vertical　bar　tends　to　be　zero　and　the　Curie　temperature　(T-c)　raises　rapidly　as　the　increase　of　Si　content　The　tendency　of　T-N　temperature　depending　on　Si　contents　implies　that　the　valence　electrons　of　Si　atoms　can　partially　be　donated　into　Mn-3d-N-2p　bond.　Another　important　finding　is　that　positive　thermal　expansion　(PTE),　NTE　and　zero　thermal　expansion　(ZTE)　are　alternatively　appeared　by　improving　the　Si　content.　The　present　work　proposes　a　novel　route　to　design　the　low-temperature　devices　using　adjustable　NTE　or　ZTE　performance　by　making　use　of　antiperovskite　Mn(3)AN　materials.　(C)　2014　Elsevier　B.V.　All　rights　reserved.