By　virtue　of　the　small　active　volume　around　Cu　catalyst,　graphene　is　synthesized　by　fast　chemical　vapor　deposition　(CVD)　in　a　cold　wall　vertical　system.　Despite　being　highly　polycrystalline,　it　is　as　conductive　and　transparent　as　standard　graphene　and　can　be　used　in　light　emitting　diodes　as　transparent　electrodes.　7-10　nm　indium　tin　oxide　(ITO)　contact　layer　is　inserted　between　the　graphene　and　p-GaN　to　enhance　hole　injection.　Devices　with　forward　voltage　and　transparency　comparable　to　those　using　traditional　240　nm　ITO　are　achieved　with　better　ultraviolet　performances,　hinting　the　promising　future　for　application-oriented　graphene　by　rapid　CVD.　(C)　2013　AIP　Publishing　LLC　[http://dx.doi.org/10.1063/1.4802798]