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Author:

Qi, Haiqiang (Qi, Haiqiang.) | Sun, Xiuping (Sun, Xiuping.) | Sun, Zhirong (Sun, Zhirong.) (Scholars:孙治荣)

Indexed by:

EI Scopus SCIE

Abstract:

Etched graphite felt (EGF) was successfully fabricated using in situ CoOX etching process and used as a cathode to degrade diuron in the electro-Fenton (E-Fenton) process. The graphite felt prepared using the in situ CoOX etching process could markedly enhance the electrochemical properties with high electroactive surface area and rapid electron transfer capacity. Due to the high content of defects and porous structure, EGF electrode exhibited superior performance with high yield of hydrogen peroxide and rapid regeneration capacity of Fe2+, achieving 100% removal of diuron (20 mg/L) at -0.7 V/SCE within 50 min. In addition, the stability of the EGF cathode showed no significant decay in the performance after 35 cycles. EGF electrode had achieved good degradation effect for different pollutants, such as atrazine, amoxicillin, atenolol and 2, 4, 6-trichlorophenol. In three runs, the EGF cathode showed low Co leaching (< 1 ppm). Moreover, the possible degradation pathways of diuron were proposed by analyzing the intermediates in this work. The results obtained in this work highlight the potential of EGF electrode for use as an E-Fenton cathode.

Keyword:

Porous structure Electro-fenton Defects Graphite felt Degradation pathway

Author Community:

  • [ 1 ] [Qi, Haiqiang]Beijing Univ Technol, Natl Engn Lab Adv Municipal Wastewater Treatment, Beijing 100124, Peoples R China
  • [ 2 ] [Sun, Xiuping]Beijing Univ Technol, Natl Engn Lab Adv Municipal Wastewater Treatment, Beijing 100124, Peoples R China
  • [ 3 ] [Sun, Zhirong]Beijing Univ Technol, Natl Engn Lab Adv Municipal Wastewater Treatment, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 孙治荣

    [Sun, Zhirong]Beijing Univ Technol, Natl Engn Lab Adv Municipal Wastewater Treatment, Beijing 100124, Peoples R China

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Source :

CHEMICAL ENGINEERING JOURNAL

ISSN: 1385-8947

Year: 2021

Volume: 403

1 5 . 1 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:87

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 93

SCOPUS Cited Count: 99

ESI Highly Cited Papers on the List: 6 Unfold All

  • 2023-3
  • 2023-1
  • 2022-11
  • 2022-9
  • 2022-7
  • 2022-5

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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