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Author:

Xie, Yi-Yang (Xie, Yi-Yang.) | Kan, Qiang (Kan, Qiang.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Zhu, Yan-Xu (Zhu, Yan-Xu.) | Wang, Chun-Xia (Wang, Chun-Xia.) | Chen, Hong-Da (Chen, Hong-Da.)

Indexed by:

EI Scopus SCIE

Abstract:

An optimization of oxide aperture diameter to match the light emission aperture (the central defect region) in the photonic crystal vertical-cavity surface-emitting laser (PhC-VCSEL) is presented in order to obtain low threshold current and high single-fundamental-mode output of the device. A 3-D finite-difference time-domain method has been applied to simulate the mode field distribution and quality factors (Q factors) of fundamental and high order transverse modes which correspond to the mode loss of the PhC-VCSEL cavity. Single-fundamental-mode operation of PhC-VCSEL with 1.7-mW output power and low threshold current of 0.7-mA is demonstrated after oxide aperture optimization.

Keyword:

Low thershold current vertical-cavity surface-emitting lasers (VCSELs). single-fundamental-mode photonic crystal

Author Community:

  • [ 1 ] [Xie, Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Kan, Qiang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Zhu, Yan-Xu]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Chun-Xia]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Chen, Hong-Da]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Xie, Yi-Yang]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 8 ] [Kan, Qiang]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 9 ] [Xu, Chen]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 10 ] [Zhu, Yan-Xu]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 11 ] [Wang, Chun-Xia]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 12 ] [Chen, Hong-Da]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

Reprint Author's Address:

  • [Xie, Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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Source :

IEEE PHOTONICS TECHNOLOGY LETTERS

ISSN: 1041-1135

Year: 2012

Issue: 6

Volume: 24

Page: 464-466

2 . 6 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 15

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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