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Author:

Mao Ming-Ming (Mao Ming-Ming.) | Xu Chen (Xu Chen.) (Scholars:徐晨) | Wei Si-Min (Wei Si-Min.) | Xie Yi-Yang (Xie Yi-Yang.) | Liu Jiu-Cheng (Liu Jiu-Cheng.) | Xu Kun (Xu Kun.)

Indexed by:

Scopus SCIE PKU CSCD

Abstract:

A method of balancing the output power and threshold current property of vertical cavity surface emitting laser is studied. The relationship between proton implantation energy and device performance is analyzed by simulation and experiment. It is found that a higher injection energy can destroy the active region, thus reducing the output power property. The threshold current will be increased since a lower injection energy may weaken the restriction on the injection current. The results indicate that 315 keV injection energy is the right choice for our device structure. The output power and threshold current obtained under 10um aperture are 1.7 mW and 4.3 mW, respectively.

Keyword:

vertical cavity surface emitting laser proton injection energy threshold current output power

Author Community:

  • [ 1 ] [Mao Ming-Ming]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xu Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Wei Si-Min]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xie Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Liu Jiu-Cheng]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Xu Kun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Mao Ming-Ming]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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Source :

ACTA PHYSICA SINICA

ISSN: 1000-3290

Year: 2012

Issue: 21

Volume: 61

1 . 0 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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