Indexed by:
Abstract:
介绍了通过出光表面粗糙化来减少全反射的方法,实验中使用化学湿法腐蚀的技术获得预计的粗糙形貌,结果给出不同参数下的光强和光辐射功率比较,器件的外量子效率得到了约29%的提高.从理论和测试结果两方面阐述了表面粗糙化对提高红光LED外量子效率的机理.
Keyword:
Reprint Author's Address:
Email:
Source :
固体电子学研究与进展
ISSN: 1000-3819
Year: 2008
Issue: 2
Volume: 28
Page: 245-247
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: 17
Chinese Cited Count:
30 Days PV: 2
Affiliated Colleges: