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Author:

Wang, Ru-Zhi (Wang, Ru-Zhi.) (Scholars:王如志) | Kohyama, Masanori (Kohyama, Masanori.) | Tanaka, Shingo (Tanaka, Shingo.) | Tamura, Tomoyuki (Tamura, Tomoyuki.) | Ishibashi, Shoji (Ishibashi, Shoji.)

Indexed by:

EI Scopus SCIE

Abstract:

The stability and interfacial bonding of coincidence tilt and twist grain boundaries (GBs) in Al and Cu have been examined by using the projector-augmented wave method within the density-functional theory. For the {221} Sigma=9 tilt GB, glide models are more stable than mirror models for Al and Cu, and the {001} Sigma=5 twist GBs are more stable than the Sigma=9 tilt GBs for Al and Cu, due to smaller structural distortions. There is a tendency that the boundary energies in Al are substantially smaller than those in Cu. This can be explained by the electronic and atomic behavior of bond reconstruction at the interfaces in Al, due to the covalent nature of Al as observed in the charge density distribution, in contrast to rather simple metallic bonding at Cu GBs. The nature of GBs is discussed with respect to the micro-structural evolution and mechanical properties of metallic micro-crystalline formed by severe plastic deformation.

Keyword:

copper aluminum interfacial bonding coincidence boundary first-principles calculation severe plastic deformation

Author Community:

  • [ 1 ] [Wang, Ru-Zhi]Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
  • [ 2 ] [Kohyama, Masanori]Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
  • [ 3 ] [Tanaka, Shingo]Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
  • [ 4 ] [Tamura, Tomoyuki]Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan
  • [ 5 ] [Ishibashi, Shoji]Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan
  • [ 6 ] [Wang, Ru-Zhi]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 王如志

    [Wang, Ru-Zhi]Natl Inst Adv Ind Sci & Technol, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan

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Source :

JOURNAL OF THE JAPAN INSTITUTE OF METALS

ISSN: 0021-4876

Year: 2009

Issue: 8

Volume: 73

Page: 559-565

0 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:3

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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