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Author：

Zhang, Ting (Zhang, Ting.) | Cheng, Yan (Cheng, Yan.) | Song, Zhitang (Song, Zhitang.) | Liu, Bo (Liu, Bo.) (Scholars：刘博) | Feng, Songlin (Feng, Songlin.) | Han, Xiaodong (Han, Xiaodong.) (Scholars：韩晓东) | Zhang, Ze (Zhang, Ze.) | Chen, Bomy (Chen, Bomy.)

Indexed by：

EI Scopus SCIE

Abstract：

The　crystallization　of　Ge-Sb-Te　and　Si-Sb-Te　phase-change　materials　has　been　characterized　by　in　situ　time-dependent　resistance　measurement　and　transmission　electron　microscopy.　Although　silicon　has　various　properties　that　are　similar　to　those　of　germanium,　Si-Sb-Te　and　Ge-Sb-Te　crystallize　via　different　processes.　Si-Sb-Te　has　a　complex　structure　(mainly　hexagonal)　while　Ge-Sb-Te　has　a　simple　face-centered　cubic　structure　when　annealed　at　433　K　for　several　hours.　(c)　2008　Acta　Materialia　Inc.　Published　by　Elsevier　Ltd.　All　rights　reserved.

Keyword：

phase-change memory SiSbTe GeSbTe phase-change material

Author Community：

  • [ 1 ] [Zhang, Ting]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
  • [ 2 ] [Song, Zhitang]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
  • [ 3 ] [Liu, Bo]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
  • [ 4 ] [Feng, Songlin]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
  • [ 5 ] [Cheng, Yan]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 6 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 7 ] [Zhang, Ze]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 8 ] [Zhang, Ting]Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
  • [ 9 ] [Chen, Bomy]Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

Reprint Author's Address：

  • [Zhang, Ting]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China

Email：


tzhang@mail.sim.ac.cn
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Source ：

SCRIPTA MATERIALIA

ISSN： 1359-6462

Year： 2008

Issue： 11

Volume： 58

Page： 977-980

6 . 0 0 0

JCR@2022

ESI Discipline： MATERIALS SCIENCE;

JCR Journal Grade：1

Cited Count：

WoS CC Cited Count： 16

SCOPUS Cited Count： 17

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

Affiliated Colleges：

信息科学技术学院 本学院/部未明确归属的数据

材料科学与工程学院 本学院/部未明确归属的数据

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