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Abstract:
提出一种使用CF4等离子体激活处理硅片表面来降低退火温度的低温硅片直接键合新方法.硅片用CF4等离子体激活处理,经过亲水处理预键合后,再在N2保护下进行40h 300℃的热处理,硅片的键合强度达到了体硅本身的强度.
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Source :
中国机械工程
ISSN: 1004-132X
Year: 2005
Issue: z1
Volume: 16
Page: 471-472
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: 2
Chinese Cited Count:
30 Days PV: 3
Affiliated Colleges: