High-power　and　high-reliability　GaN/InGaN　flip-chip　light-emitting　diodes　(FCLEDs)　have　been　demonstrated　by　employing　a　flip-chip　design,　and　its　fabrication　process　is　developed.　FCLED　is　composed　of　a　LED　die　and　a　submount　which　is　integrated　with　circuits　to　protect　the　LED　from　electrostatic　discharge　(ESD)　damage.　The　LED　die　is　flip-chip　soldered　to　the　submount　,　and　light　is　extracted　through　the　transparent　sapphire　substrate　instead　of　an　absorbing　Ni/Au　contact　layer　as　in　conventional　GaN/InGaN　LED　epitaxial　designs.　The　optical　and　electrical　characteristics　of　the　FCLED　are　presented.　According　to　ESD　IEC61000-4-2　standard　(human　body　model),　the　FCLEDs　tolerated　at　least　10　kV　ESD　shock　have　ten　times　more　capacity　than　conventional　GaN/InGaN　LEDs.　It　is　shown　that　the　light　output　from　the　FCLEDs　at　forward　current　350mA　with　a　forward　voltage　of　3.3V　is　144.68　mW,　and　236.59　mW　at　1.0A　of　forward　current.　With　employing　an　optimized　contact　scheme　the　FCLEDs　can　easily　operate　up　to　1.0A　without　significant　power　degradation　or　failure.　The　life　test　of　FCLEDs　is　performed　at　forward　current　of　200　mA　at　room　temperature.　The　degradation　of　the　light　output　power　is　no　more　than　9%　after　1010.75　h　of　life　test,　indicating　the　excellent　reliability.　FCLEDs　can　be　used　in　practice　where　high　power　and　high　reliability　are　necessary,　and　allow　designs　with　a　reduced　number　of　LEDs.