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Abstract：
High brightness GaN-based light-emitting diodes(LEDs) with stripe-contact electrodes have been developed. The p-type Ohmic contact layer is composed of oxidized Ni/Au stripes and NiO stripes. A Ag (3000 A) omnidirectional reflector covers the p-type contact. The n-type contact is a Ti/Al planar film with a Ti/Al stripe. All Ni/Au, NiO, and Ti/Al stripes surround the center of the LED mesa. At 20 mA current operation, the light output power of GaN-based LEDs with the stripe-contact electrodes is 16.26%-35.37% higher than that of the conventional LEDs.
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APPLIED PHYSICS LETTERS
ISSN： 0003-6951
Year： 2006
Issue： 8
Volume： 89
4 . 0 0 0
JCR@2022
ESI Discipline： PHYSICS;
JCR Journal Grade：1
Cited Count：
WoS CC Cited Count： 2
SCOPUS Cited Count： 2
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 4
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