Abstract:
在晶圆磨削过程中,磨削力是导致晶圆损伤和破坏的根本原因。本文针对硅晶圆自旋转磨削方式设计了一种新型的磨削力无线测量装置。四个薄膜传感器沿径向等距置于晶圆下方。结果表明,磨削力随晶圆半径方向的增大而增大。
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Year: 2020
Language: Chinese
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WoS CC Cited Count: 0
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 10
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