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Author:

Qiu, Pingping (Qiu, Pingping.) | Li, Ming (Li, Ming.) | Xie, Yiyang (Xie, Yiyang.) | Kan, Qiang (Kan, Qiang.)

Indexed by:

CPCI-S EI

Abstract:

In this paper, the far-field characteristic of the vertical-cavity surface-emitting laser (VCSEL) incorporating a high-contrast subwavelength grating (HCG) is analyzed by finite-difference time-domain (FDTD) method. Full three-dimensional simulations are carried out by utilizing FDTD solutions software. We study the parameters of HCG made from GaAs/AlOx which is defined by wet oxidation of an Al0.98Ga0.02As spacer layer. We have simulated HCG-VCSELs with different HCG periods and oxide aperture diameters. Various far-field patterns including single-lobe, double-lobe, triple-lobe shapes are obtained with the designed HCG-VCSEL. More interestingly, by tuning the HCG periods and the oxide aperture diameter, the far-field emission patterns transform from double-lobe to single-lobe shapes. By proper design of the two parameters, one can obtain Gaussian-like beam outputs, double-lobe or multi-lobe beams. The full-width half-maximum (FWHM) of the far-field divergent angle of the Gaussian-like fundamental mode obtained with grating periods of 23 and oxide aperture diameter of 8 mu m is less than 5 degree. This opens a new path for engineering a VCSEL's emission properties and provides guideline for actual device fabrication.

Keyword:

vertical-cavity surface-emitting laser (VCSEL) high-contrast subwavelength grating (HCG) far-field beam shaping Finite-difference time-domain (FDTD)

Author Community:

  • [ 1 ] [Qiu, Pingping]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing, Peoples R China
  • [ 2 ] [Li, Ming]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing, Peoples R China
  • [ 3 ] [Kan, Qiang]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing, Peoples R China
  • [ 4 ] [Qiu, Pingping]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
  • [ 5 ] [Li, Ming]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
  • [ 6 ] [Kan, Qiang]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
  • [ 7 ] [Qiu, Pingping]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing, Peoples R China
  • [ 8 ] [Li, Ming]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing, Peoples R China
  • [ 9 ] [Kan, Qiang]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing, Peoples R China
  • [ 10 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing, Peoples R China

Reprint Author's Address:

  • [Qiu, Pingping]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing, Peoples R China;;[Qiu, Pingping]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China;;[Qiu, Pingping]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing, Peoples R China

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Source :

SEMICONDUCTOR LASERS AND APPLICATIONS IX

ISSN: 0277-786X

Year: 2019

Volume: 11182

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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