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Author:

Wei, Simin (Wei, Simin.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Mao, Mingming (Mao, Mingming.) | Xie, Yiyang (Xie, Yiyang.) | Cao, Tian (Cao, Tian.)

Indexed by:

CPCI-S EI Scopus

Abstract:

We have analyzed transverse mode characteristics of 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL) with shallow surface relief (SR) structure by finite-difference time-domain (FDTD) method. We have used FDTD solution software to complete the full 3D simulations, which costs us about 24 hours for every structure. The ring form SR structure has been located in the central of the topmost DBR, and the depth is 1/4 optical wavelength, which can suppress the higher mode from emitting to the maximum extent. We have simulated different inner diameter of the ring form structures on 10-mu m oxide-confined VCSELs, and compared the transverse mode characteristics with that of ordinary VCSEL. Finally find the structure can effectively decrease far-field divergent and improve transverse mode performance. The most suitable inner diameter is 6.5-mu m, and the full-width half-maximum of the far-field divergent angle is 5.5 degrees, which provides guideline for actual device fabrication.

Keyword:

surface relief (SR) Finite-difference time-domain (FDTD) vertical-cavity surface-emitting laser (VCSEL) far-field divergent angle

Author Community:

  • [ 1 ] [Wei, Simin]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Mao, Mingming]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Cao, Tian]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Wei, Simin]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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Source :

PHOTONICS AND OPTOLECTRONICS MEETINGS (POEM) 2011: OPTOELECTRONIC DEVICES AND INTEGRATION

ISSN: 0277-786X

Year: 2011

Volume: 8333

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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