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Abstract：
Large area uniform graphene was directly grown on insulating substrate by cross-linked Parylene graphitization. The as-grown graphene was used for the fabrication of graphene-Si Schottky junction photodetector with a responsivity of 275.9 mA/W. (C) 2019 The Author(s)
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Source ：
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
ISSN： 2160-9020
Year： 2019
Language： English
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 10
