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Author:

Liu, Qian (Liu, Qian.) | Shu, Yutian (Shu, Yutian.) | Ma, Limin (Ma, Limin.) | Guo, Fu (Guo, Fu.) (Scholars:郭福)

Indexed by:

CPCI-S

Abstract:

Microstructure evolution and temperature distribution of eutectic SnBi solder joint under high current density of 1x10(4) A/cm(2) at room temperature were investigated in the current study. With the increase of current stressing time, a continuous Bi segregation layer was formed and grew along the interface at the anode side, and a Sn rich region was found at the cathode side. Due to the microstructure changes in solder alloys, temperature distribution tended to be nonuniform. Because of the aggregation of Bi atoms, which have higher electrical resistivity and lower thermal conductivity, at the anode side, the temperature of anode was higher than the cathode. Due to the formation of severe cracks in the solder joints, the local Joule Heating effect was enhanced and the local temperature was much higher. It was found that the microstructure evolution induced by electromigration (EM) could alter the temperature distribution. By using the infrared microscope to record temperature in the solder joint during current stressing, the relationship was established between microstructural changes and temperature filed in the SnBi joint under high current density.

Keyword:

Joule Heating effect electromigration microstructure evolution eutectic SnBi temperature distribution

Author Community:

  • [ 1 ] [Liu, Qian]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Shu, Yutian]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Liu, Qian]Beijing Univ Technol, Coll Mat Sci & Engn, 100 Ping Le Yuan, Beijing 100124, Peoples R China

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Source :

2014 15TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT)

Year: 2014

Page: 907-911

Language: English

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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