Abstract:
本文简要地综述了超晶格半导体材料GaAs-Al_xGa_(1-x)As的物理特性及其在激光和大规模集成电路中的应用,评述了整数量子霍尔效应的主要理论。
Keyword:
Reprint Author's Address:
Email:
Source :
北京工业大学学报
Year: 1986
Issue: 02
Page: 107-117
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 14
Affiliated Colleges: