• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
搜索

Author:

Zhou, Ning (Zhou, Ning.) | Zhang, Wei (Zhang, Wei.) | Zhang, Xin (Zhang, Xin.) | Liu, Hongliang (Liu, Hongliang.) | Lu, Qingmei (Lu, Qingmei.) | Xiao, Yixin (Xiao, Yixin.) | Liu, Yanqin (Liu, Yanqin.) | Jin, Shengli (Jin, Shengli.) | Liao, Ning (Liao, Ning.)

Indexed by:

EI Scopus SCIE

Abstract:

The field-emission tip arrays (FEAs) in single crystal cerium-hexaboride (CeB6) were micro-processed by femtosecond laser. The results show that the femtosecond laser has no damage to the surface structure and phase of the CeB6 FEAs, and the FEA with the curvature radius of the optimal tips of about 0.6 μm and the height of about 5 μm have uniform morphology and the best field-emission performance. The single crystal CeB6 FEAs had good emission stability under the following conditions: the starting electric field of 2.8 V/μm and an emission current density of 0.98 A/cm2 at an electric field of 7.7 V/μm. The calculations of material removal threshold and finite element simulation of the temperature field substantiate that laser peak energy density F0=0.95 J/cm2 is in good agreement with the theoretical calculation result (0.51 J/cm2≤F0 ≤ 2.12 J/cm2). Finally, the best process parameter range of this experiment is obtained. These results further indicating that the femtosecond laser micro-processing is an effective method to develop the vacuum field-emission application of single crystal CeB6. © 2020 Elsevier Ltd

Keyword:

Single crystals Surface structure Femtosecond lasers Electric fields Cerium compounds Morphology Field emission

Author Community:

  • [ 1 ] [Zhou, Ning]Faculty of Materials and Manufacturing, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing; 100124, China
  • [ 2 ] [Zhang, Wei]AVIC Beijing Research Institute of Aviation Engineering, Beijing; 100024, China
  • [ 3 ] [Zhang, Xin]Faculty of Materials and Manufacturing, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing; 100124, China
  • [ 4 ] [Liu, Hongliang]Faculty of Materials and Manufacturing, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing; 100124, China
  • [ 5 ] [Liu, Hongliang]Anyang Institute of Technology, Anyang; 455000, China
  • [ 6 ] [Lu, Qingmei]Faculty of Materials and Manufacturing, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing; 100124, China
  • [ 7 ] [Xiao, Yixin]Faculty of Materials and Manufacturing, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing; 100124, China
  • [ 8 ] [Liu, Yanqin]Faculty of Materials and Manufacturing, Beijing University of Technology, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing; 100124, China
  • [ 9 ] [Jin, Shengli]Montanuniverstaet Leoben, 8700, Austria
  • [ 10 ] [Liao, Ning]The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan; 430081, China

Reprint Author's Address:

  • [liu, hongliang]anyang institute of technology, anyang; 455000, china;;[liu, hongliang]faculty of materials and manufacturing, beijing university of technology, key laboratory of advanced functional materials, ministry of education, beijing; 100124, china

Show more details

Related Keywords:

Source :

Vacuum

ISSN: 0042-207X

Year: 2021

Volume: 184

4 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:116

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

Online/Total:486/10602101
Address:BJUT Library(100 Pingleyuan,Chaoyang District,Beijing 100124, China Post Code:100124) Contact Us:010-67392185
Copyright:BJUT Library Technical Support:Beijing Aegean Software Co., Ltd.