Third-generation　semiconductor　SiC　has　the　advantages　of　large　band　gap,　fast　carrier　saturation　migration　speed　and　high　critical　breakdown　electric　field　strength.　These　characteristics　make　SiC　based　electronic　devices　modification　technology　an　important　research　significance　in　the　field　of　high-performance　light-emitting　devices,　high　power　and　high-frequency　devices.　However,　due　to　wide　bandgap　and　complex　surface　state　of　SiC,　the　regulation　of　its　luminescent　properties　and　fabrication　of　excellent　Ohmic　contact　with　SiC/metal　interface　are　always　difficult　that　significantly　influence　the　working　performance　and　development　in　SiC　devices.　In　this　paper,　we　introduce　the　mechanism　of　light-emission　regulation　in　broad　band　of　blue　and　ultraviolet/white　light　photoluminescence　by　high　energy　laser　irradiation　on　SiC　single　crystal　surface.　Studies　determine　that　surface　modification　mechanism　of　laserinduced　C-atomic　defect　state　for　electrical　transmission　and　improvement　of　electrical　contact　performance　of　SiC　surface.　©　2021　SPIE.