The　third　generation　semiconductors,　such　as　Silicon　Carbide　(SiC),　are　widely　used　in　aerospace,　automobile　and　other　industries.　It　has　a　lot　of　characteristics　such　as　wide　band　gap,　high　thermal　conductivity　and　high　bonding　energy　etc.　Since　its　hardness　is　only　less　than　that　of　diamond,　it　is　difficult　to　be　cut　during　semiconductor　process.　SiC　semiconductor　devices　are　still　mainly　in　the　research　and　development　stage,　but　the　process　is　basically　similar　to　Si　semiconductor　production　process.　The　cutting　process　is　the　first　stage　during　semiconductor　process,　during　which　crystal　ingot　is　cut　into　wafer.　This　process　produces　a　large　number　of　surface　defects.　If　the　defects　are　not　removed,　the　defects　will　be　copied　to　the　epitaxial　layer.　Therefore,　it　is　necessary　to　remove　surface　damage　and　defects　before　the　epitaxial　process　to　improve　the　surface　quality.　The　result　shows　the　optimal　tool　parameters　are　small　negative　rake　angle　(-30　°)　and　large　clearance　angle　(15　°).　The　cutting　force　in　second　cutting　process　is　less　than　the　first　cutting　process　and　it　enters　the　stable　stage　more　quickly.　Considering　that　the　second　cutting　process　contains　a　part　of　the　amorphous　structure,　the　required　cutting　force　will　become　smaller　which　means　the　material　easier　to　remove.　©　2020　IEEE.