The　internal　anti-parallel　Schottky　barrier　diode　threshold　voltage　of　SiC　metal-oxide-semiconductor　field-effect　transistor　(MOSFET)　modules　is　less　than　that　of　their　body　diodes,　which　prevents　the　use　of　the　body　diode　voltage　drop　to　measure　junction　temperature.　In　this　paper,　a　thermal　resistance　test　of　the　SiC　MOSFET　module　is　proposed　based　on　the　onstate　voltage　drop　as　a　temperature-sensitive　electrical　parameter.　Measurements　are　performed　with　the　method　and　its　feasibility　evaluated.　The　on-state　voltage　drop　temperature　sensitivity　under　different　gate　voltages　and　the　repeatability　of　the　on-state　voltage　drop　parameters　before　and　after　electric　power　heating　in　the　thermal　resistance　tests　are　studied.　The　on-state　voltage　drop　is　measured　under　a　high　gate　voltage　and　the　accuracy　of　junction　temperature　measurement　improves　when　the　grid　voltage　remains　the　same　during　heating　and　measurement.　©　Published　under　licence　by　IOP　Publishing　Ltd.