This　paper　proposes　a　novel　method　for　online　junction　temperature　measurement　of　silicon　carbide　metaloxide-semiconductor　field-effect　transistors　(SiC　MOSFETs).　The　measurement　method　is　using　the　miller　plateau　voltage　(VGS)　and　source　leakage　current　(IDS)　at　transient　inrush　currents　during　turn-on　process　that　based　on　the　temperaturesensitive　electrical　parameters　measurement　method　(TSEP).　The　comparison　of　infrared　temperature　measurement　results　shows　that　this　method　can　provide　more　accurate　junction　temperature　results　and　also　can　be　used　for　transient　junction　temperature　measurement　in　SiC　MOSFET　devices.　It　solves　the　problem　that　the　traditional　temperature-sensitive　electrical　parameter　measurement　method　is　difficult　to　measure　the　transient　temperature　rise.　Finally,　the　results　show　that　the　use　of　VGS　and　IDS　can　provide　more　accurate　junction　temperature　results　which　can　be　used　for　transient　junction　temperatures　in　SiC　MOSEFT　devices.　©　2020　IEEE.