The　current　loss　is　mainly　due　to　the　reflection　and　the　parasitic　absorption　in　the　indium　tin　oxide　(ITO)　and　amorphous　silicon　(a-Si:H)　in　the　front　side　of　silicon　heterojunction　(SHJ)　solar　cells.　In　this　paper,　we　implemented　n-type　hydrogenated　microcrystalline　silicon　oxide　(n-mu　c-SiOx:H)　as　the　front　surface　field　(FSF)　to　improve　the　short-circuit　current　density　(J(SC))　of　SHJ　solar　cells.　The　advantage　of　employing　n-mu　c-SiOx:H　layer　is　due　to　its　low　optical　absorption　coefficient　and　tunable　refractive　index.　However,　the　introduction　of　carbon　dioxide　increases　light　transmission　but　reduces　the　crystallinity　of　n-mu　c-SiOx:H　layer.　Meanwhile,　inhibiting　the　incubation　layer　and　increasing　microcrystalline/amorphous　mixture　phase　during　the　growth　are　critical　to　the　solar　cell　performance.　Therefore,　we　implemented　a　high　phosphorus-doping　seed　layer　to　form　a　nucleation　layer　to　improve　the　crystallinity　of　n-mu　c-SiOx:H　layer.　In　addition,　the　plasma　enhanced　chemical　vapor　deposition　(PECVD)　process　parameters　of　each　layer　were　optimized　to　obtain　good　optical　and　electrical　properties　of　n-mu　c-SiOx:H　layer.　Finally,　a　242.5　cm(2)　solar　cell　had　been　fabricated　with　conversion　efficiency　of　23.87%,　open-circuit　voltage　(V-OC)　of　739.8　mV,　fill　factor　(FF)　of　82.33%　and　J(SC)　of　39.19　mA/cm(2),　which　was　0.31　mA/cm(2)　higher　than　that　of　the　conventional　n　type　a-Si:H　SHJ　solar　cells.