Two-dimensional　(2D)　ferromagnetic　materials　have　been　discovered　with　tunable　magnetism　and　orbital-driven　nodal-line　features.　Controlling　the　2D　magnetism　in　exfoliated　nanoflakes　via　electric/magnetic　fields　enables　a　boosted　Curie　temperature　(T-C)　or　phase　transitions.　One　of　the　challenges,　however,　is　the　realization　of　high　T-C　2D　magnets　that　are　tunable,　robust　and　suitable　for　large　scale　fabrication.　Here,　we　report　molecular-beam　epitaxy　growth　of　wafer-scale　Fe3+XGeTe2　films　with　T-C　above　room　temperature.　By　controlling　the　Fe　composition　in　Fe3+XGeTe2,　a　continuously　modulated　T-C　in　a　broad　range　of　185-320　K　has　been　achieved.　This　widely　tunable　T-C　is　attributed　to　the　doped　interlayer　Fe　that　provides　a　40%　enhancement　around　the　optimal　composition　X　=　2.　We　further　fabricated　magnetic　tunneling　junction　device　arrays　that　exhibit　clear　tunneling　signals.　Our　results　show　an　effective　and　reliable　approach,　i.e.　element　doping,　to　producing　robust　and　tunable　ferromagnetism　beyond　room　temperature　in　a　large-scale　2D　Fe3+XGeTe2　fashion.　We　report　the　tunable　2D　ferromagnetism　above-room-temperature　in　wafer-scale　Fe3+XGeTe2　films　and　demonstrate　magnetic　tunneling　junction　arrays　using　Fe3+XGeTe2　films.