The　single　crystal　GdB6　were　prepared　by　optical　zone　melting　method.　Moreover,　using　the　femtosecond　laser　micromachining　technology　processed　the　field-emission　tip　arrays　(FEAs)　on　the　(100)　surface　of　single　crystal　GdB6.　The　single　crystal　quality,　field　emission　of　the　FEAs,　as　well　as　the　electronic　structure　of　single　crystal　GdB6　are　systematically　characterized.　The　quality　of　single　crystal　is　good.　The　curvature　radius　of　the　produced　FEAs　with　uniform　morphology　and　undamaged　crystal　surface　structure　are　about　0.5　mu　m.　The　FEAs　showed　good　field　emission　performance,　which　the　turn-on　electric　field　of　the　FEAs　is　2.6　V/mu　m　with　a　field　emission　current　of　0.46　A/cm(2)　at　7.3　V/mu　m　and　the　emission　current　has　high　stability.　The　calculation　electronic　structure　of　GdB6　show　that　the　5d　electron　of　Gd　determines　the　electronic　state　of　excellent　emission　performance.　The　high　electric　field　will　greatly　decrease　the　surface　barrier　and　work　function　of　GdB6,　according　with　the　field　emission　theory.