High-efficiency,　high-speed　phototransistors　applicable　in　visible　wavelength　and　the　near-infrared　regime　are　highly　desirable　for　optical　communication　links　utilized　for　data　centers,　high-performance　computing,　and　laser　radar　application.　To　overcome　the　intrinsic　weak　absorption　of　silicon　material　and　alleviate　the　compromise　between　efficiency　and　speed　of　the　device,　a　SiGe/Si　heterojunction　phototransistor　(HPT)　with　photon-trapping　nanoholes　is　demonstrated　in　this　article.　With　photon-trapping　nanohole　structures,　the　absorption　efficiency　of　the　HPT　is　greatly　improved　near　the　whole　band　ranging　from　600-　to　1000-nm　wavelength　compared　to　one　without　nanoholes.　The　responsivity　of　nanohole-assisted　HPT　is　25.69,　27.02,　and　15.65　A/W　at　650-,　850-,　and　940-nm　wavelength,　exhibiting　85.22%,　192.42%,　and　848.48%　improvement　compared　with　its　counterpart　without　nanoholes.　The　thin　base　region　also　allows　a　high　speed　of　the　HPT　with　a　transient　response　of　0.45　ns　at　850-nm　wavelength.