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Author:

Bian, Ce (Bian, Ce.) | Xie, Hong-Yun (Xie, Hong-Yun.) | Guo, Min (Guo, Min.) | Sha, Yin (Sha, Yin.) | Xiang, Yang (Xiang, Yang.) | Liu, Xian-Cheng (Liu, Xian-Cheng.) | Zhang, Wan-Rong (Zhang, Wan-Rong.)

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EI Scopus

Abstract:

A kind of SiGe heterojunction phototransistor with gradual coupled ridge waveguide based on silicon-on-insulator (SOI SiGe GRC HPT) is designed and optimized to improve its optical responsivity and working speed. When the width and length of the ridge waveguide are optimized as 3um and 20um separately, the ridge waveguide based on SOI provide the same limitation for TE mode and TM mode and the suitable propagation path for incident light. The maximum characteristic frequency of SOI SiGe GRC HPT is 102GHz, its saturation current is 20mA and its optical responsivity is 0.5 A/W. © 2020 IEEE.

Keyword:

Heterojunctions Si-Ge alloys Ridge waveguides Incident light Phototransistors Silicon on insulator technology

Author Community:

  • [ 1 ] [Bian, Ce]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
  • [ 2 ] [Xie, Hong-Yun]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
  • [ 3 ] [Guo, Min]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
  • [ 4 ] [Sha, Yin]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
  • [ 5 ] [Xiang, Yang]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
  • [ 6 ] [Liu, Xian-Cheng]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China
  • [ 7 ] [Zhang, Wan-Rong]Beijing University of Technology, Faculty of Information Technology, Beijing; 100124, China

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Year: 2020

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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