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Abstract：
The effect of different base structural parameters on SiGe Heterojunction Phototransistor (HPT) performance is analyzed in this paper. It proposes a reference for designing SiGe HPT with both high responsivity and high characteristic frequency. Responsivity of 5.58 A/W and characteristic frequency of 21.29 GHz for 850 nm light are achieved when the thickness of base layer is 70nm with the doping concentration of 1.0×1019 cm-3. © 2018 IEEE.
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Year： 2018
Language： English
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WoS CC Cited Count： 0
SCOPUS Cited Count： 2
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 13
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