In　this　work,　the　current　transient　method　was　conducted　for　trap　analysis　in　the　p-GaN　gate　high-electron-mobility　transistors　(HEMTs)　in　the　OFF-state.　Based　on　the　traditional　detrapping　transient　measurements,　the　pure　recovery　transients　can　be　isolated　by　subtracting　the　undetected　part　caused　by　the　measurement　conditions.　A　comparison　of　the　measured　and　actual　recovery　transients　under　different　drain　filling　voltages　was　presented.　It　suggested　that　this　method　can　be　effective　to　analyze　the　unregular　transient　curves　and　distinguish　the　charge　trapping　type　preliminarily.　In　addition,　three　traps　were　identified　based　on　the　time　constant　spectra　and　the　hidden　absolute　amplitudes　of　traps　can　be　corrected　using　the　differential　amplitude　spectra.　The　information　of　trap　levels　in　the　buffer　layer　and　AlGaN　barrier　layer　was　revealed,　consisting　of　three　electron　traps　with　energy　levels　of　0.313,　0.265,　and　0.467　eV.　The　identification　of　the　traps　may　provide　a　physical　foundation　for　better　understanding　of　the　drain-induced　trapping　effect　during　the　OFF-state　in　p-GaN　HEMTs.