This　article　presents　the　experimental　results　of　the　heavy-ion-induced　gate　oxide　damage　and　single-event　burnout　(SEB)　in　1200　V　SiC　double-trench　MOSFETs.　The　short-circuit　between　any　two　terminals　of　devices　under　test　(DUTs)　was　observed　during　the　exposure　with　a　drain　bias　of　only　100　V　and　post-irradiation　measurements.　In　addition,　the　experimental　results　also　showed　that　the　SEB　threshold　of　DUTs　does　not　exceed　500　V,　which　was　lower　than　42　%　of　the　rated　breakdown　voltage.　TCAD　simulations　revealed　that　the　electric　field　concentrated　at　the　corner　and　sidewall　of　gate　oxide,　resulting　in　the　latent　oxide　damage,　which　should　be　responsible　for　the　leakage　current　degradation　at　low　drain　bias.　It　was　also　verified　that　the　SEB　failure　was　due　to　the　thermal　destruction　caused　by　the　high　temperature　near　the　n(-)drift/n(+)　substrate　junction,　which　was　further　determined　by　the　SEM　image　of　the　die　surface.　The　findings　in　this　article　could　provide　indications　for　future　use　of　such　state-of-the-art　SiC　double-trench　MOSFETs　in　space.