Changes　in　the　electrical　properties　and　trap　characteristics　of　flexible　low-temperature　polysilicon　thin-film　transistors　(TFTs)　under　the　application　of　uniaxial　bending　strains　and　during　repetitive　bending　cycles　were　investigated.　When　the　bending　strain　increased,　the　transfer　curve　showed　a　negative　shift,　the　output　current　decreased,　and　the　subthreshold　slope　increased.　After　the　bending　strains　were　removed,　the　electrical　performance　showed　recovery　behavior,　but　the　device　performance　could　not　return　fully　to　its　original　state.　The　devices　were　also　subjected　to　repetitive　bending　cycles.　The　transfer　curves　showed　a　positive　shift　after　10(4)　bending　cycles　and　the　output　current　increased.　Using　the　transient　current　method,　it　was　established　that　the　detrapping　time　constant　of　the　traps　decreased　and　the　peak　amplitudes　increased　as　a　result　of　both　the　bending　strain　and　the　bending　cycles.　However,　while　the　trap　activation　energy　was　not　changed　by　static　bending,　it　did　decrease　after　the　repetitive　bending　cycles.　Both　the　changes　in　the　electrical　properties　and　the　time　constant　spectra　confirm　that　the　trap　state　density　increased　as　a　result　of　the　bending　processes.　However,　the　different　trapping　behaviors　contributed　to　different　degradations　in　the　device＇s　electrical　properties.