Following　improvements　in　their　operating　voltage　levels,　insulated　gate　bipolar　transistors　(IGBTs)　are　largely　packaged　using　parallel　packaging　processes.　However,　these　processes　introduce　an　uneven　temperature　dis-tribution　problem,　regardless　of　whether　pressed　or　welded　packaging　is　used.　In　this　paper,　the　temperature　inhomogeneity　of　IGBT　modules　under　various　test　conditions　is　studied　using　a　thermography　camera.　The　temperature　uniformity　is　determined　for　each　chip　using　the　difference　between　its　maximum　and　average　temperatures.　IGBT　module　temperature　uniformity　is　evaluated　using　the　difference　between　the　highest　temperature　and　the　average　temperature　of　three　chips.　Experimental　results　show　that　when　the　current　level　increases,　the　overall　IGBT　module　temperature　also　increases.　The　temperatures　of　both　the　module　and　the　chip　become　increasingly　uneven.　The　temperature　of　the　module　shows　a　Gaussian　mode　distribution.　The　positional　and　discrete　parameters　of　the　Gaussian　distribution　increase　with　increasing　current.　As　the　ambient　temper-ature　increases,　the　temperature　inhomogeneity　in　each　IGBT　chip　increases,　but　this　trend　is　not　dramatic.　When　the　current　on-time　increases,　the　temperature　distributions　of　the　three　IGBT　chips　and　the　module　gradually　become　nonuniform.