Insulated　gate　bipolar　transistor　(IGBT)　operates　at　high　current,　high　power　and　repeated　shock　current　conditions.　Joule　heating　induced　during　high　current　conditions,　subsequently　raising　the　temperature　of　the　IGBT　module.　In　this　paper,　we　carried　out　the　DC　power　cycling　test　with　the　200　A　current　condition.　The　temperature　distribution　and　the　temperature　change　process　of　the　whole　IGBT　module　are　recorded　by　using　a　high-speed　infrared　detecting　camera.　The　finite　element　model　of　IGBT　module　is　established　by　using　finite　element　analysis　software　ABAQUS.　By　simulating　DC　power　cycling　test,　the　temperature　distribution　of　IGBT　module　under　different　current　loads　is　analyzed,　the　temperature　change　process　of　the　whole　IGBT　module　is　studied,　and　the　maximum　temperature　location　of　the　IGBT　module　is　determined.　Comparing　with　the　experimental　data　obtained　under　the　same　conditions,　the　simulation　results　are　in　good　agreement　with　the　experimental　data,　which　verifies　the　finite　element　model.　©　2017　IEEE.