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Abstract：
A new IGBT finite element model considering conducting channel is established. The mechanism in the degradation process of metallization is still uncertain. Thermal stress is considered to be an important factor. Temperature and stress field were obtained by the new model. SEM analysis of degradation metallization surface under DC power cycling test are obtained, and compare with the stress distribution of the simulation. © 2018 IEEE.
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Year： 2018
Page： 1322-1325
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 10
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