Flexible　light-emitting　diodes　(LEDs)　are　highly　desired　for　wearable　devices,　flexible　displays,　robotics,　biomedicine,　etc.　Traditionally,　the　transfer　process　of　an　ultrathin　wafer　of　about　10-30　mu　m　to　a　flexible　substrate　is　utilized.　However,　the　yield　is　low,　and　it　is　not　applicable　to　thick　GaN　LED　chips　with　a　100　mu　m　sapphire　substrate.　In　this　paper,　transferable　LED　chips　utilized　the　mature　LED　manufacture　technique　are　developed,　which　possesses　the　advantage　of　high　yield.　The　flexible　LED　array　demonstrates　good　electrical　and　optical　performance.