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Author:

Du, Z. (Du, Z..) | Wang, K. (Wang, K..) | Sun, J. (Sun, J..) | Guo, W. (Guo, W..) | Wu, C. (Wu, C..) | Lin, C. (Lin, C..) | Yan, Q. (Yan, Q..)

Indexed by:

EI Scopus SCIE

Abstract:

Realizing full color GaN-based micro-and nano-light-emitting diode (nLED) displays with quantum dots (QDs) being the color conversion media remains challenging because of the limited QD color conversion efficiency (CCE). In this article, by using GaN-based nanorod LED as the light source and exciting the QDs by nonradiative energy transfer (NRET) method, a nanorod LED with ultrahigh CCE has been realized. At the same time, a single electrical contact alternating current (ac)-driven electroluminescence (EL) method is adopted to investigate the relationship between frequency and nLED performance. Different from the double terminal injection mode, on the premise of lighting up the nanorod LED, the ac-driven can also avoid the necessity of external p-type and n-type electrodes, thus simplified the manufacturing process of LED. The final optical measurement shows that the CCE of this hybrid color conversion nLED driven by single contact electrode can reach up to 86.67% under the ac voltage of 60 V and an ac frequency of 14.2 MHz, which shows that the energy utilization efficiency can be effectively improved by NRET. IEEE

Keyword:

Color conversion efficiency (CCE) Etching Light emitting diodes Image color analysis Contacts single electrical contact Energy exchange Color nanorod light-emitting diode (LED) nonradiative energy transfer (NRET) Electrodes

Author Community:

  • [ 1 ] [Du Z.]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
  • [ 2 ] [Wang K.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 3 ] [Sun J.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 4 ] [Guo W.]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
  • [ 5 ] [Wu C.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 6 ] [Lin C.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 7 ] [Yan Q.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2023

Issue: 3

Volume: 70

Page: 1-6

3 . 1 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:19

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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