Direct patterned growth of PECVD graphene transparent electrodes on GaN LED epiwafers using co as a sacrificial catalyst layer - Details

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Abstract：

Co　acts　as　both　an　etching　mask　and　a　catalyst　for　the　growth　of　grapheme,　high-quality　graphene　can　be　obtained　quickly　and　at　low　temperatures　for　transparent　electrode　applications　on　GaN　LEDs.　©　OSA　2020　©　2020　The　Author　(s)

Keyword：

Etching Light emitting diodes III-V semiconductors Graphene Catalysts Transparent electrodes Gallium nitride

Author Community：

[ 1 ] [Xiong, Fangzhu]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Dong, Yibo]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Wang, Le]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Du, Zaifa]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China