Metal-assisted Direct Growth of CVD Graphene on GaN as Transparent Electrodes - Details

Author：

Indexed by：

Abstract：

This　paper　reports　a　metal　assisted　process　for　the　direct　growth　of　CVD　graphene　on　GaN　LED　epiwafers.　The　metal　layer　was　introduced　as　both　the　mask　and　catalyst,　which　was　subsequently　removed　in　a　penetration　etching　process.　This　provides　a　solution　for　the　integration　of　graphene　and　GaN　devices.　©　2022　ITE　and　SID.

Keyword：

Light emitting diodes Graphene III-V semiconductors Transparent electrodes Gallium nitride Etching

Author Community：

[ 1 ] [Tang, Penghao]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Xiong, Fangzhu]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Du, Zaifa]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Li, Kai]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Mei, Yu]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Yan, Qun]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
[ 8 ] [Yan, Qun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 9 ] [Sun, Jie]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350117, China
[ 10 ] [Sun, Jie]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China

Reprint Author's Address：

Email：

Show more details

Related Keywords：

Direct patterned growth of PECVD graphene transparent electrodes on GaN LED epiwafers using co as a sacrificial catalyst layer
2020，CLEO: Science and Innovations, CLEO_SI 2020
Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers using Co as a Sacrificial Catalyst Layer
2020，2020 Conference on Lasers and Electro-Optics, CLEO 2020
Direct Growth of Transparent Graphene Electrodes on GaN LEDs Using Metal Proximity Catalytic Effect
2021，2021 Conference on Lasers and Electro-Optics, CLEO 2021
Direct growth of transparent graphene electrodes on GaN LEDs using metal proximity catalytic effect
2021，CLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021

Source ：

ISSN： 1883-2490

Year： 2022

Volume： 29

Page： 868-870

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 7

Affiliated Colleges：

Get Fulltext

Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to