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Due to the strong light–matter interactions, van der Waals semiconducting materials have shown their great potential in the development of high-performance photodetectors. However, the van der Waals semiconducting devices via conventional growth method often introduce defects or are in the form of isolated flakes, which hinders the optoelectronics from widespread applications. In this paper, van der Waals semiconductor indium selenide (InSe) fibers for photodetection were developed based on thermal drawing. Meters level length of InSe fibers have been fabricated through thermal drawing, and the problem of easy cracking of InSe is solved. The InSe fibers have high crystallinity, and it is found that the cleavage planes have a preferential orientation. The InSe fibers show a high-speed response to modulated 639 nm laser irradiation with up to 10 kHz repetition rate. In addition, the photoelectric response of the fibers were further improved through annealing by CO2 laser. © 2022 SPIE.
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ISSN: 0277-786X
Year: 2022
Volume: 12501
Language: English
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count: 1
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 9
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