Warpage　has　exerted　great　influence　during　the　fabrication　of　TSV　interposer　wafer.　A　building　blocks　inspired　model　is　presented　to　predict　the　warpage　of　large　scale　complex　TSV　interposer　wafer.　Due　to　the　sophisticated　redistribution　layer　(RDL)　pattern　and　large　number　and　nonuniform　distribution　of　TSV-Cu,　accurately　predicting　wafer　warpage　evolution　is　still　a　big　challenge　during　the　fabrication.　In　this　article,　a　novel　method　called　building　blocks　inspired　(BBI)　is　proposed　firstly　for　large　scale　TSV　interposer　wafer　packaging　structure.　Firstly,　according　to　the　periodic　representative　volume　element　(RVE)　homogeneous　theory,　an　equivalent　finite　element　model　was　built　and　the　warpage　evolution　is　predicted　and　analyzed　by　element　death-birth　technique.　Then,　experiment　study　was　conducted　and　the　validation　of　simulation　results　was　confirmed　by　using　FSM　system.　What＇s　more,　based　on　the　model　before,　a　more　accurate　equivalent　model　using　BBI　method　was　built　to　predict　the　wafer　warpage.　It　was　found　that　as　the　number　of　building　blocks　in　the　pattern　area　increases,　the　error　between　simulation　and　experiment　becomes　smaller.　Besides,　the　direction　of　wafer　warpage　is　constantly　changing　during　manufacturing,　and　the　greatest　wafer　warpage　occurs　during　the　bonding　process　in　the　middle　of　the　process,　not　at　the　end　of　the　manufacturing　process.　In　conclusion,　this　study　presents　a　novel　insight　on　modeling　method　to　solve　the　sophisticated　structure　such　as　RDL　and　TSV-Cu.　Some　useful　suggestions　were　provided　for　the　convenience　of　engineering　practice　to　predict　wafer　level　warpage.　　©　2022　IEEE.