Oxygen　vacancy　(V-o)　engineering　is　a　powerful　tool　to　improve　semiconductor　metal　oxide-based　surface-enhanced　Raman　scattering　(SERS)　activity　due　to　the　enriched　surface　states　of　substrates.　However,　the　current　energy-consuming　high　temperature　hydrogen　reduction　methods　of　introducing　V-o　and　the　poor　sensitivity　impede　practical　applications　of　semiconductor　SERS.　In　this　work,　a　facile　solvothermal　method　was　developed　to　prepare　ultrafine　WO3-x　nanorods　(similar　to　3　nm　width)　for　highperformance　SERS　substrates.　The　lowest　detection　limit　of　the　rhodamine　6G　(R6G)　molecule　on　the　Vo　substrate　can　be　as　low　as　10(-10)　mol/L　and　exceeds　that　of　unmodified　WO3　by　more　than　two　orders　of　magnitude.　Experimental　and　calculated　results　suggest　that　the　V-o-induced　localized　surface　plasmon　resonance　(LSPR),　diverse　vibronic　coupling,　and　enhanced　charge　transfer　synergistically　account　for　this　outstanding　activity.　These　findings　can　provide　insights　into　the　rational　design　of　oxygen　vacancy　tailored　semiconductor　SERS　substrates.