In　order　to　optimize　the　optoelectronic　performance　based　on　metal-doped　ITO　LED,　the　effect　of　the　thickness　of　the　ITO/SiO2　double-layer　film　in　metal-doped　ITO　LED　is　investigated　in　this　paper.　Al-doped　ITO　films　with　thicknesses　of　50　nm,　70　nm,　and　110　nm　were　designed　and　prepared　on　the　UV　LED　epitaxial　wafer　with　a　peak　wavelength　of　393　nm,　and　a　90　nm　SiO2　passivation　layer　was　prepared　on　its　surface　to　form　Al-doped　ITO/SiO2　double-layer　film　of　140　nm,　160　nm　and　200　nm　on　the　surface　of　the　LED.　At　the　same　time,　ITO/SiO2　double-layer　films　of　the　above　three　thicknesses　formed　by　undoped　ITO　films　with　SiO2　passivation　layers　were　prepared　on　the　slides.　The　photovoltaic　properties　of　the　prepared　LED　and　the　transmittance　and　square　resistance　of　the　ITO/SiO2　double-layer　film　were　measured.　The　experimental　data　show　that　the　LED　with　a　200　nm　Al-doped　ITO/SiO2　double-layer　film　has　13.8%　and　26%　enhanced　optical　power　compared　to　the　LED　with　140　nm　and　160　nm　Al-doped　ITO/SiO2　double-layer　film　system,　respectively,　and　it　has　the　lowest　operating　voltage.　By　comparing　the　optical　power　of　LED　with　metal-doped　ITO　to　the　light　transmittance　of　an　undoped　ITO/SiO2　double-layer　film,　we　found　that　the　effect　of　metal　doping　is　related　to　the　thickness　of　the　ITO　double-layer　film,　and　there　is　a　negative　correlation　between　the　two　in　a　specific　range.