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This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the LGD. For LGD=27 μm, the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The Ron is17.7\ Ωmm, and the specific on-resistance Rsp is 6.73 mΩcm2. To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I-V characteristics of the structures, with the pinch-off voltage of the I-V characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed. © 2023 IEEE.
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ISSN： 1063-6854
Year： 2023
Volume： 2023-May
Page： 127-130
Language： English
Cited Count：
SCOPUS Cited Count： 13
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 6
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