A　new　compact　and　easy-to-achieve　edge　termination　featuring　the　n-p　double　rings　and　all-cover　field　plates　is　presented　for　silicon　high-voltage　devices.　This　structure　can　divide　and　share　much　more　voltage　at　each　n-p　double　ring　than　its　conventional　counterpart　does　and　thus　largely　shrink　the　lateral　spreading　of　the　depletion　region.　At　a　given　blocking　voltage,　it　helps　save　the　chip　area,　and　lower　the　leakage　current.　Simulation　results　show　that,　with　a　total　width　of　only　1.6　mm,　this　edge　termination　can　support　nearly　5.8　kV　under　the　conditions　given　in　this　paper.　Further　studying　for　the　new　termination　includes　the　control　of　the　surface　electric-field　peaks　at　high　voltages　and　the　variation　of　the　breakdown　voltage　with　the　fixed　oxide　charge.　©　2017　IEEE.