Considering　the　characteristics　of　CMOS　circuits　that　are　susceptible　to　radiation,　a　stacked　parallel　CMOS　transistor　structure　using　3.3V　core　MOSFET　instead　of　5V　core　MOSFET　and　a　PMOS-controlled　undervoltage　lockout　circuit　are　proposed.　By　thinning　the　gate　oxide　layer　and　using　PMOS　to　control　the　comparison　circuit　technology,　the　locked　voltage　of　the　circuit　after　irradiation　is　almost　unchanged　and　the　leakage　current　is　halved.　On　the　basis　of　these　structures,　a　half-bridge　GaN　gate　driver　is　designed,　which　can　realize　the　function　correctly　under　irradiation,　and　even　improve　the　power　characteristics.　©　2020　ACM.